By Francis Balestra
This booklet deals a finished evaluation of the cutting-edge in leading edge Beyond-CMOS nanodevices for constructing novel functionalities, common sense and thoughts devoted to researchers, engineers and scholars. The publication will quite specialize in the curiosity of nanostructures and nanodevices (nanowires, small slope switches, second layers, nanostructured fabrics, etc.) for complex greater than Moore (RF-nanosensors-energy harvesters, on-chip digital cooling, etc.) and Beyond-CMOS good judgment and thoughts functions.
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Extra info for Beyond CMOS Nanodevices 2
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Here, we present simulations of silicon NWs according to the effective-mass approximation [POL 08, BUR 09], and InAs NWs according to the eight band k·p Hamiltonian proposed in [BAH 90], which describes the valence and conduction bands at the Γ point and accounts for the spin–orbit interaction. e. by using the finite-difference method on a 3D grid where rijk = (xi, yj, zk) is the generic discretization point, then we obtain a block tridiagonal matrix with submatrices HRS(xi, xj), where i identifies the xi section of the NW.