By Greg Geiger
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Extra resources for Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials VII
CONCLUSIONS Magnetoelectric effect in BLFO films grown on the SRO buffered Pt coated silicion substrates by the soft chemical method was noted. The maximum magnetoelectric coefficient was close to 12 V/cmOe in the longitudinal direction. The high dielectric permittivity of the BLFO films was mainly due to the less structural disorder and less two-dimensional stress in the plane of the film. Ferroelectric domain characteristics by PFM were also investigated to study the dependence of electrical properties on grain orientations.
Piezoelectric force microscopy images reveal that in-plane response may not change its sign upon polarization switching, while the out-of-plane response does. Lanthanum substitution was found to effectively induce spontaneous magnetization in antiferromagnetic BiFe03 exhibiting good piezoelectric properties. The presence of magnetoelectric coupling at room temperature is noteworthy since it could give additional degrees of freedom in device fabrication. ACKNOWLEDGEMENT The financial support of this research project by the Brazilian research funding agencies CNPq and FAPESP is gratefully acknowledged.
As shown in Fig. 3, a PZT single-layer film exhibited a well-shaped ferroelectric hysteresis loop with a small coercive field of less than 100 kV/cm. The values of the remnant polarization (Pr) and the coercive field (£c) of the PZT and PZT/CFO/PZT thin films were approximately 32 and 30 uC/cm2 and 90 and 240 kV/cm2, respectively. The PZT/CFO/PZT layered thin film also exhibited a well-shaped ferroelectric hysteresis loop and a remanent polarization of approximately 30 uC/cm2. Although the PZT/CFO/PZT film showed a PT value comparable to that of the PZT single-layer film, relatively larger coercive fields were observed.