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Download About Face 3: The Essentials of Interaction Design by Alan Cooper, Robert Reimann, Dave Cronin PDF

By Alan Cooper, Robert Reimann, Dave Cronin

This thoroughly up to date quantity provides the potent and sensible instruments you must layout nice computing device purposes, net 2.0 websites, and cellular units. You'll research the rules of excellent product habit and achieve an figuring out of Cooper's Goal-Directed layout process, which contains every little thing from engaging in consumer examine to defining your product utilizing personas and eventualities. finally, you'll gather the data to layout the very best electronic services and products.

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ISBN: 3034608187
EAN: 9783034608183
ASIN: 3034608187
Publisher: Birkhaeuser
Publication Date: 2012-12-01
Number of Pages: 224
Website: Amazon, LibraryThing, Google Books, Goodreads

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Wiring in microsystems does not require such small dimensions. Typically, the width of conductor paths is in the range from a few micrometers up to some millimeters. This chapter describes how the resistance of a conductor path is affected by strain and temperature providing the basics for designing strain gauges. The resistance Rel of a conductor path with length LL, thickness dL, width bL, and specific resistance rel can be calculated with the following equation: Rel ¼ rel LL : bL dL (15) If this conductor path is strained in the direction of its length by DLL ¼ LL el, width by DbL ¼ bL eb, and thickness DdL ¼ dL ed, the resistance changes according to the change in geometry: DRel ¼ qRel qRel qRel DLL þ DbL þ DdL ¼ Rel ðel À eb À ed Þ: qLL qbL qdL (16) If a unidirectional strain el is applied to this conductor path in the direction of its length (cf.

13: During heating the stress follows the line from A to B. At B, a theoretical line is reached which marks the stress level as a function of temperature at which recrystallization starts. From B to C the stress follows this line. When cooling starts there is no longer enough stress for recrystallization and the stress follows the difference in thermal expansion until the tensile stress at D gets so large that the stress follows another line which marks the start of recrystallization. Fig. 12 Thin film stress as a function of heating and cooling (reproduced from [12]) Fig.

Typically, the deflection by bending of a silicon wafer with a diameter of 100 mm and a thickness of 500 mm is on the order of 100 mm when the thickness of the thin film is 100 nm. On the macroscopic scale, this is of no importance. When a bridge is painted, nobody cares about the change in shape entailed with this. On the microscopic scale, however, this is an effect which needs to be considered. K. 1007/978-3-642-19489-4_4, # Springer-Verlag Berlin Heidelberg 2011 9 10 Thin Films Substrate bowing is used to measure residual stress s0 of thin films.

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